～2019

論文（英文誌）

  1. “Relationship between photodarkening and light-induced ESR in amorphous Ge-S films alloyed with lead”, Atsushi Masuda, Minoru Kumeda, Tatsuo Shimizu, Japanese Journal of Applied Physics Part 2, vol. 30, no. 6B, pp. L1075-L1078, 1991.6.　DOI: 10.1143/JJAP.30.L1075
  2. “Light-induced ESR and disappearance of photodarkening in amorphous Ge-S films alloyed with lead”, Atsushi Masuda, Minoru Kumeda, Akiharu Morimoto, Tatsuo Shimizu, Journal of Non-Crystalline Solids, vols. 137-138, pp. 985-988, 1991.12.　DOI: 10.1016/S0022-3093(05)80286-8
  3. “Novel oxidation process of hydrogenated amorphous silicon utilizing nitrous oxide plasma”, Atsushi Masuda, Akiharu Morimoto, Minoru Kumeda, Tatsuo Shimizu, Yasuto Yonezawa, Toshiharu Minamikawa, Applied Physics Letters, vol. 61, no. 7, pp. 816-818, 1992.8.17.　DOI: 10.1063/1.107754
  4. “Spectroscopic study on N2O-plasma oxidation of hydrogenated amorphous silicon and behavior of nitrogen”, Atsushi Masuda, Iwao Fukushi, Yasuto Yonezawa, Toshiharu Minamikawa, Akiharu Morimoto, Minoru Kumeda, Tatsuo Shimizu, Japanese Journal of Applied Physics Part 1, vol. 32, no. 6A, pp. 2794-2802, 1993.6.　
  5. “Orientation of MgO thin films on Si(100) and GaAs(100) prepared by electron-beam evaporation”, Atsushi Masuda, Keiichi Nashimoto, Japanese Journal of Applied Physics Part 2, vol. 33, no. 6A, pp. L793-L796, 1994.6.　DOI: 10.1143/JJAP.33.L793
  6. “Relationship between electrical conductivity and charged-dangling-bond density in nitrogen- and phosphorus-doped hydrogenated amorphous silicon”, Atsushi Masuda, Ken-ichi Itoh, Jiang-Huai Zhou, Minoru Kumeda, Tatsuo Shimizu, Japanese Journal of Applied Physics Part 2, vol. 33, no. 9B, pp. L1295-L1297, 1994.9.　DOI: 10.1143/JJAP.33.L1295
  7. “Ultrathin SiO2 films on Si formed by N2O-plasma oxidation technique”, Atsushi Masuda, Yasuto Yonezawa, Akiharu Morimoto, Minoru Kumeda, Tatsuo Shimizu, Applied Surface Science, vol. 81, no. 3, pp. 277-280, 1994.11.　DOI 10.1016/0169-4332(94)90284-4
  8. “Correlation between a.c. transport and electron spin resonance in amorphous Ge-S films alloyed with lead”, Koichi Shimakawa, Takeharu Kato, Koji Hayashi, Atsushi Masuda, Minoru Kumeda, Tatsuo Shimizu, Philosophical Magazine B, vol. 70, no. 5, pp. 1035-1044, 1994.11.　DOI: 10.1080/01418639408240271
  9. “NH3-plasma-nitridation process of (100) GaAs surface observed by angle-dependent X-ray photoelectron spectroscopy”, Atsushi Masuda, Yasuto Yonezawa, Akiharu Morimoto, Tatsuo Shimizu, Japanese Journal of Applied Physics Part 1, vol. 34, no. 2B, pp. 1075-1079, 1995.2.　DOI: 10.1143/JJAP.34.1075
  10. “Interfacial neutral- and charged-dangling-bond densities between hydrogenated amorphous silicon and hydrogenated amorphous silicon nitride in top nitride and bottom nitride structures”, Hoonkee Min, Iwao Fukushi, Atsushi Masuda, Akiharu Morimoto, Minoru Kumeda, Tatsuo Shimizu, Applied Physics Letters, vol. 66, no. 20, pp. 2718-2720, 1995.5.15.　DOI: 10.1063/1.113499
  11. “Highly oriented Pb(Zr,Ti)O3 thin films prepared by pulsed laser ablation on GaAs and Si substrates with MgO buffer layer”, Atsushi Masuda, Yasuhiro Yamanaka, Mitsutoshi Tazoe, Yasuto Yonezawa, Akiharu Morimoto, Tatsuo Shimizu, Japanese Journal of Applied Physics Part 1, vol. 34, no. 9B, pp. 5154-5157, 1995.9.　DOI: 10.1143/JJAP.34.5154
  12. “Preparation and crystallographic characterizations of highly oriented Pb(Zr0.52Ti0.48)O3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation”, Atsushi Masuda, Yasuhiro Yamanaka, Mitsutoshi Tazoe, Takanori Nakamura, Akiharu Morimoto, Tatsuo Shimizu, Journal of Crystal Growth, vol. 158, nos. 1-2, pp. 84-88, 1996.1.1.　DOI: 10.1016/0022-0248(95)00317-7
  13. “Mechanism of stoichiometric deposition of volatile elements in multimetal-oxide films prepared by pulsed laser ablation”, Atsushi Masuda, Kazuko Matsuda, Yasuto Yonezawa, Akiharu Morimoto, Tatsuo Shimizu, Japanese Journal of Applied Physics Part 2, vol. 35, no. 2B, pp. L237-L240, 1996.2.　DOI: 10.1143/JJAP.35.L237
  14. “Origin of charged dangling bonds in nitrogen-doped hydrogenated amorphous silicon”, Atsushi Masuda, Ken-ichi Itoh, Minoru Kumeda, Tatsuo Shimizu, Journal of Non-Crystalline Solids, vols. 198-200, pp. 395-398, 1996.5.2.　DOI: 10.1016/0022-3093(95)00741-5
  15. “X-ray photoelectron spectroscopy and electron spin resonance studies on O2- and N2O-plasma oxidation of silicon”, Atsushi Masuda, Yasuto Yonezawa, Akiharu Morimoto, Minoru Kumeda, Tatsuo Shimizu, Materials Science and Engineering B, vol. 39, no. 3, pp. 173-178, 1996.7.　DOI: 10.1016/0921-5107(96)01574-7
  16. “N2-plasma-nitridation effects on porous silicon”, Haruo Yokomichi, Atsushi Masuda, Yasuto Yonezawa, Tatsuo Shimizu, Thin Solid Films, vols. 281-282, nos. 1-2, pp. 568-571, 1996.8.1.　DOI: 10.1016/0040-6090(96)08717-2
  17. “Influence of buffer layers on lead magnesium niobate titanate thin films prepared by pulsed laser ablation”, Takanori Nakamura, Atsushi Masuda, Akiharu Morimoto, Tatsuo Shimizu, Japanese Journal of Applied Physics Part 1, vol. 35, no. 9A, pp. 4750-4754, 1996.9.　DOI: 10.1143/JJAP.35.4750
  18. “Ambient-pressure influence on droplet formation and thickness distribution in pulsed laser ablation”, Atsushi Masuda, Kazuko Matsuda, Satoshi Usui, Yasuto Yonezawa, Toshiharu Minamikawa, Akiharu Morimoto, Tatsuo Shimizu, Materials Science and Engineering B, vol. 41, no. 1, pp. 161-165, 1996.10.　DOI: 10.1016/S0921-5107(96)01645-5
  19. “Nitrogen- and ammonia-plasma nitridation of hydrogenated amorphous silicon”, Atsushi Masuda, Shuji Yoshimoto, Yasuto Yonezawa, Akiharu Morimoto, Minoru Kumeda, Tatsuo Shimizu, Applied Surface Science, vols. 113-114, pp. 610-613, 1997.4.　DOI: 10.1016/S0169-4332(96)00783-0
  20. “Nitrogen-doping effects on electrical, optical and structural properties in hydrogenated amorphous silicon”, Atsushi Masuda, Ken-ichi Itoh, Kazuko Matsuda, Yasuto Yonezawa, Minoru Kumeda, Tatsuo Shimizu, Journal of Applied Physics, vol. 81, no. 10, pp. 6729-6737, 1997.5.15　DOI: 10.1063/1.365215
  21. “Interface control of Pb(ZrxTi1-x)O3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer”, Susumu Horita, Tetsuya Naruse, Mikio Watanabe, Atsushi Masuda, Tsuyoshi Kawada, Yukinari Abe, Applied Surface Science, vols. 117-118, pp. 429-433, 1997.6.2.　DOI: 10.1016/S0169-4332(97)80119-5
  22. “Influence of Pb incorporation on light-induced phenomena in amorphous Ge100-x-yPbxSy thin films”, Atsushi Masuda, Yasuto Yonezawa, Akiharu Morimoto, Minoru Kumeda, Tatsuo Shimizu, Journal of Non-Crystalline Solids, vol. 217, nos. 2-3, pp. 121-135, 1997.9.1.　DOI: 10.1016/S0022-3093(97)00148-8
  23. “Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant”, Haruo Yokomichi, Tohru Hayashi, Atsushi Masuda, Applied Physics Letters, vol. 72, no. 21, pp. 2704-2706, 1998.5.25.　DOI: 10.1063/1.121105
  24. “Structural and conductivity change caused by N, O and C incorporation in a-Si:H”, Tatsuo Shimizu, Takehiko Ishii, Minoru Kumeda, Atsushi Masuda, Journal of Non-Crystalline Solids, vols. 227-230, pp. 403-406, 1998.5.　DOI: 10.1016/S0022-3093(98)00083-0
  25. “Preparation of fluorinated amorphous carbon thin films”, Haruo Yokomichi, Tohru Hayashi, Tomihiro Amano, Atsushi Masuda, Journal of Non-Crystalline Solids, vols. 227-230, pp. 641-644, 1998.5.　DOI: 10.1016/S0022-3093(98)00234-8
  26. “Structural and electrical anisotropy and high absorption in poly-Si films prepared by catalytic chemical vapor deposition”, Atsushi Masuda, Ritsuko Iiduka, Akira Heya, Chisato Niikura, Hideki Matsumura, Journal of Non-Crystalline Solids, vols. 227-230, pp. 987-991, 1998.5.　DOI: 10.1016/S0022-3093(98)00259-2
  27. “Structural and electrical properties of yttria-stabilized zirconia films with controlled Y content heteroepitaxially grown on Si by reactive sputtering”, Susumu Horita, Mikio Watanabe, Atsushi Masuda, Materials Science and Engineering B, vol. 54, nos. 1-2, pp. 79-83, 1998.6.12.　DOI: 10.1016/S0921-5107(98)00132-9
  28. “Fabrication of Pb(Zr,Ti)O3/MgO/GaN/GaAs structure for optoelectronic device applications”, Atsushi Masuda, Shinya Morita, Hideki Shigeno, Akiharu Morimoto, Tatsuo Shimizu, Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, Journal of Crystal Growth, vols. 189-190, pp. 227-230, 1998.6.15.　DOI: 10.1016/S0022-0248(98)00241-3
  29. “Effects of oxygen gas addition and substrate cooling on preparation of amorphous carbon nitride films by magnetron sputtering”, Haruo Yokomichi, Hiroyuki Sakima, Atsushi Masuda, Japanese Journal of Applied Physics Part 1, vol. 37, no. 9A, pp. 4722-4725, 1998.9.　DOI: 10.1143/JJAP.37.4722
  30. “Material properties of heteroepitaxial yttria-stabilized zirconia films with controlled yttria contents on Si prepared by reactive sputtering”, Susumu Horita, Mikio Watanabe, Shinya Umemoto, Atsushi Masuda, Vacuum, vol. 51, no. 4, pp. 609-613, 1998.12.1.　DOI: 10.1016/S0042-207X(98)00259-0
  31. “Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten”, Akira Heya, Atsushi Masuda, Hideki Matsumura, Applied Physics Letters, vol. 74, no. 15, pp. 2143-2145, 1999.4.12.　DOI: 0.1063/1.123782
  32. “Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method”, Akira Izumi, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vols. 343-344, pp. 528-531, 1999.4.　DOI: 10.1016/S0040-6090(98)01688-5
  33. “Suppression of hexagonal GaN mixing by As4 molecular beam in cubic GaN growth on GaAs(001) substrate”, Akihiro Hashimoto, Takanori Motizuki, Hideki Wada, Atsushi Masuda, Akio Yamamoto, Journal of Crystal Growth, vols. 201/202, pp. 392-395, 1999.5.　DOI: 10.1016/S0022-0248(98)01356-6
  34. “Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition”, Chisato Niikura, Atsushi Masuda, Hideki Matsumura, Journal of Applied Physics, vol. 86, no. 2, pp. 985-990, 1999.7.15.　DOI: 10.1063/1.370836
  35. “Effect of sputtering with hydrogen dilution on fluorine concentration of low hydrogen content fluorinated amorphous carbon thin films with low dielectric constant”, Haruo Yokomichi, Atsushi Masuda, Journal of Applied Physics, vol. 86, no. 5, pp. 2468-2472, 1999.9.1.　DOI: 10.1063/1.371078
  36. “Annealing effect of Pb(Zr,Ti)O3 ferroelectric capacitor in active ammonia gas cracked by catalytic chemical vapor deposition system”, Toshiharu Minamikawa, Yasuto Yonezawa, Takashi Nakamura, Yoshikazu Fujimori, Atsushi Masuda, Hideki Matsumura, Japanese Journal of Applied Physics Part 1, vol. 38, no. 9B, pp. 5358-5360, 1999.9.　DOI: 10.1143/JJAP.38.5358
  37. “Mixing mechanism of h-GaN in c-GaN growth on GaAs (001) substrates”, Akihiro Hashimoto, Hideki Wada, Toshihito Ueda, Yukihiro Nishio, Atsushi Masuda, Akio Yamamoto, Physica Status Solidi (a), vol. 176, no. 1, pp. 519-524, 1999.11.22.　DOI: 10.1002/(SICI)1521-396X(199911)176:1<519::AID-PSSA519>3.0.CO;2-A
  38. “Transport mechanism of deposition precursors in catalytic CVD studied by a reactor tube”, Namiko Honda, Atsushi Masuda, Hideki Matsumura, Journal of Non-Crystalline Solids, vol. 266-269, pp. 100-104, 2000.5.1.　DOI: 10.1016/S0022-3093(99)00747-4
  39. “Novel deposition technique of Er-doped a-Si:H combining catalytic chemical vapor deposition and pulsed laser-ablation”, Atsushi Masuda, Joe Sakai, Haruo Akiyama, Osamu Eryu, Kenshiro Nakashima, Hideki Matsumura, Journal of Non-Crystalline Solids, vols. 266-269, pp. 136-140, 2000.5.1.　DOI: 10.1016/S0022-3093(99)00780-2
  40. “Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen anneal”, Akira Heya, Atsushi Masuda, Hideki Matsumura, Journal of Non-Crystalline Solids, vols. 266-269, pp. 619-623, 2000.5.1.　DOI: 10.1016/S0022-3093(99)00754-1
  41. “Effects of nitrogen incorporation on structural properties of fluorinated amorphous carbon films”, Haruo Yokomichi, Atsushi Masuda, Journal of Non-Crystalline Solids, vol. 271, nos. 1-2, pp. 147-151, 2000.6.　DOI: 10.1016/S0022-3093(00)00104-6
  42. “Control of polycrystalline silicon structure by the two-step deposition method”, Akira Heya, Akira Izumi, Atsushi Masuda, Hideki Matsumura, Japanese Journal of Applied Physics Part 1, vol. 39, no. 7A, pp. 3888-3895, 2000.7.　DOI: 10.1143/JJAP.39.3888
  43. “Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy”, Yoshitaka Nozaki, Koichi Kongo, Toshihiko Miyazaki, Makiko Kitazoe, Katsuhiko Horii, Hironobu Umemoto, Atsushi Masuda, Hideki Matsumura, Journal of Applied Physics, vol. 88, no. 9, pp. 5437-5443, 2000.11.1.　DOI: 10.1063/1.1314330
  44. “Novel thin-film fabrication method combining pulsed laser ablation and catalytic chemical vapor deposition: Application to preparation of Er-doped hydrogenated amorphous Si films”, Atsushi Masuda, Joe Sakai, Hideki Matsumura, Vacuum, vol. 59, nos. 2-3, pp. 635-640, 2000.11.　DOI: 10.1016/S0042-207X(00)00327-4
  45. “Effects of double bonding configurations on thermal stability of low-hydrogen concentration fluorinated amorphous carbon thin-films with low dielectric constant prepared by sputtering with hydrogen dilution”, Haruo Yokomichi, Atsushi Masuda, Vacuum, vol. 59, nos. 2-3, pp. 771-776, 2000.11.　DOI: 10.1016/S0042-207X(00)00346-8
  46. “Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition”, Atsushi Masuda, Chisato Niikura, Yoriko Ishibashi, Hideki Matsumura, Solar Energy Materials and Solar Cells, vol. 66, nos. 1-4, 259-265, 2001.2.　DOI: 10.1016/S0927-0248(00)00182-3
  47. “Catalytic chemical sputtering: A novel method to obtain large grain polycrystalline silicon”, Hideki Matsumura, Koji Kamesaki, Atsushi Masuda, Akira Izumi, Japanese Journal of Applied Physics Part 2, vol. 40, no. 3B, pp. L289-L291, 2001.3.　DOI: 10.1143/JJAP.40.L289
  48. “RF-MBE growth and Raman scattering characterization of lattice-matched GaInNAs on GaAs (001) substrates”, Akihiro Hashimoto, Takashi Furuhata, Takeshi Kitano, A. Kiet Nguyen, Atsushi Masuda, Akio Yamamoto, Journal of Crystal Growth, vols. 227-228, pp. 532-535, 2001.7.　DOI: 10.1016/S0022-0248(01)00761-8
  49. “Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4”, Yoshitaka Nozaki, Makiko Kitazoe, Katsuhiko Horii, Hironobu Umemoto, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 47-50, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01205-6
  50. “Development of Cat-CVD apparatus -a method to control wafer temperatures under thermal influence of heated catalyzer”, Minoru Karasawa, Atsushi Masuda, Keiji Ishibashi, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 71-74, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01210-X
  51. “Photoinduced volume changes in a-Si:H films prepared by Cat-CVD method”, Takashi Hatano, Yoshiaki Nakae, Hiromi Mori, Kaori Ohkado, Norimitsu Yoshida, Shuichi Nonomura, Masaya Itoh, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 84-86, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01214-7
  52. “Guiding principles for device-grade hydrogenated amorphous silicon films and design of catalytic chemical vapor deposition apparatus”, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 112-115, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01224-X
  53. “High-stability hydrogenated amorphous silicon films for light-soaking prepared by catalytic CVD with high deposition rates”, Masaya Itoh, Yoriko Ishibashi, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 138-141, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01237-8
  54. “Influence of a-Si:H deposition by catalytic CVD on transparent conducting oxides”, Kensaku Imamori, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 147-151, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01241-X
  55. “Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly-Si”, Koji Kamesaki, Atsushi Masuda, Akira Izumi, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 169-172, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01252-4
  56. “Formation of silicon films for solar cells by the Cat-CVD method”, Manabu Komoda, Koji Kamesaki, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 198-201, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01257-3
  57. “Fabrication of amorphous carbon nitride films by hot wire chemical vapor deposition”, Haruo Yokomichi, Atsushi Masuda, Naoki Kishimoto, Thin Solid Films, vol. 395, pp. 249-252, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01264-0
  58. “A Cat-CVD Si3N4 film study and its application to the ULSI process”, Yuji Uchiyama, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 275-279, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01282-2
  59. “Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature”, Hidekazu Sato, Akira Izumi, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 280-283, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01284-6
  60. “Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD”, Toshiharu Minamikawa, Yasuto Yonezawa, Akira Heya, Yoshikazu Fujimori, Takashi Nakamura, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 284-287, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01285-8
  61. “High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate”, Masahiro Sakai, Takayuki Tsutsumi, Tatsuo Yoshioka, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 395, pp. 330-334, 2001.9.3.　DOI: 10.1016/S0040-6090(01)01289-5
  62. “Direct detection of H atoms in the catalytic chemical vapor deposition of the SiH4/H2 system”, Hironobu Umemoto, Kentaro Ohara, Daisuke Morita, Yoshitaka Nozaki, Atsushi Masuda, Hideki Matsumura, Journal of Applied Physics, vol. 91, no. 3, pp. 1650-1656, 2002.2.1.　DOI: 10.1063/1.1428800
  63. “Low-resistivity phosphorus-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealing”, Rui Morimoto, Akira Izumi, Atsushi Masuda, Hideki Matsumura, Japanese Journal of Applied Physics Part 1, vol. 41, no. 2A, pp. 501-506, 2002.2.　DOI: 10.1143/JJAP.41.501
  64. “Effects of atomic hydrogen in gas phase on a-Si:H and poly-Si growth by catalytic CVD”, Hironobu Umemoto, Yoshitaka Nozaki, Makiko Kitazoe, Katsuhiko Horii, Kentaro Ohara, Daisuke Morita, Kenji Uchida, Yoriko Ishibashi, Manabu Komoda, Koji Kamesaki, Akira Izumi, Atsushi Masuda, Hideki Matsumura, Journal of Non-Crystalline Solids, vols. 299-302, pp. 9-13, 2002.4.　DOI: 10.1016/S0022-3093(02)00928-6
  65. “Photoinduced volume expansion and contraction in a-Si:H films”, Norimitsu Yoshida, Yasushi Sobajima, Hiroki Kamiguchi, Tamio Iida, Takashi Hatano, Hiromi Mori, Yoshiaki Nakae, Masaya. Itoh, Atsushi Masuda, Hideki Matsumura, Shuichi Nonomura, Journal of Non-Crystalline Solids, vols. 299-302, pp. 516-520, 2002.4.　DOI: 10.1016/S0022-3093(02)00934-1
  66. “Influence of atomic hydrogen on transparent conducting oxides during hydrogenated amorphous and microcrystalline Si preparation by catalytic chemical vapor deposition”, Atsushi Masuda, Kensaku Imamori, Hideki Matsumura, Thin Solid Films, vol. 411, no. 1, pp. 166-170, 2002.5.22.　DOI: 10.1016/S0040-6090(02)00207-9
  67. “Preparation of boron-carbon-nitrogen thin films by magnetron sputtering”, Haruo Yokomichi, Takeo Funakawa, Atsushi Masuda, Vacuum, vol. 66, nos. 3-4, pp. 245-249, 2002.8.19.　DOI: 10.1016/S0042-207X(02)00149-5
  68. “What is the difference between catalytic CVD and plasma-enhanced CVD? Gas-phase kinetics and film properties”, Atsushi Masuda, Akira Izumi, Hironobu Umemoto, Hideki Matsumura, Vacuum, vol. 66, nos. 3-4, pp. 293-297, 2002.8.19.　DOI: 10.1016/S0042-207X(02)00133-1
  69. “Oxidation process in pulsed laser ablation of Si with various ambients”, Atsushi Masuda, Satoshi Usui, Yasuhiro Yamanaka, Yasuto Yonezawa, Toshiharu Minamikawa, Michio Suzuki, Akiharu Morimoto, Minoru Kumeda, Tatsuo Shimizu, Thin Solid Films, vol. 416, nos. 1-2, pp. 106-113, 2002.9.2.　DOI: 10.1016/S0040-6090(02)00540-0
  70. “In-situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells”, Atsushi Masuda, Yoriko Ishibashi, Kenji Uchida, Koji Kamesaki, Akira Izumi, Hideki Matsumura, Solar Energy Materials and Solar Cells, vol. 74, nos. 1-4, pp. 373-377, 2002.10.　DOI 10.1016/S0927-0248(02)00130-7
  71. “Optical properties of RF-MBE grown AlGaAsN”, Kenji Yamamoto, Masayuki Uchida, Akio Yamamoto, Atsushi Masuda, Akihiro Hashimoto, Physica Status Solidi (b), vol. 234, no. 3, pp. 915-918, 2002.12.3.　DOI: 10.1002/1521-3951(200212)234:3<915::AID-PSSB915>3.0.CO;2-8
  72. “Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates”, Akihiro Hashimoto, Takeshi Kitano, A. Kiet Nguyen, Atsushi Masuda, Akio Yamamoto, So Tanaka, Mitsuo Takahashi, Akihiro Moto, Tatsuya Tanabe, Shigenori Takagishi, Solar Energy Materials and Solar Cells, vol. 75, nos. 1-2, pp. 313-317, 2003.1.　DOI: 10.1016/S0927-0248(02)00174-5
  73. “Recent progress of Cat-CVD research in Japan -Bridging between the first and second Cat-CVD conferences-“, Hideki Matsumura, Hironobu Umemoto, Akira Izumi, Atsushi Masuda, Thin Solid Films, vol. 430, nos. 1-2, pp. 7-14, 2003.4.22.　DOI: 10.1016/S0040-6090(03)00072-5　（招待論文）
  74. “Deposition chemistry in the Cat-CVD processes of the SiH4/NH3 system”, Hironobu Umemoto, Takashi Morimoto, Moroyuki Yamawaki, Yoshie Masuda, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 430, nos. 1-2, pp. 24-27, 2003.4.22.　DOI: 10.1016/S0040-6090(03)00124-X
  75. “Development of Cat-CVD apparatus for 1-m-size large-area deposition”, Keiji Ishibashi, Minoru Karasawa, Ge Xu, Naoaki Yokokawa, Manabu Ikemoto, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 430, nos. 1-2, pp. 58-62, 2003.4.22.　DOI: 10.1016/S0040-6090(03)00071-3　（招待論文）
  76. “Coverage properties of silicon nitride film prepared by the Cat-CVD method”, Shuji Osono, Yuji Uchiyama, Makiko Kitazoe, Kazuya Saito, Masahiro Hayama, Atsushi Masuda, Akira Izumi, Hideki Matsumura, Thin Solid Films, vol. 430, nos. 1-2, pp. 165-169, 2003.4.22.　DOI: 10.1016/S0040-6090(03)00100-7
  77. “Fabrication of a-Si1-xCx:H thin films for solar cells by the Cat-CVD method using a carbon catalyzer”, Ken Sugita, Masaya Itoh, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 430, nos. 1-2, pp. 170-173, 2003.4.22.　DOI: 10.1016/S0040-6090(03)00102-0
  78. “Crystallization by excimer laser annealing for a-Si:H films with low hydrogen content prepared by Cat-CVD”, Yusuke Yogoro, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 430, nos. 1-2, pp. 296-299, 2003.4.22.　DOI: 10.1016/S0040-6090(03)00089-0
  79. “Radical species formed by the catalytic decomposition of NH3 on heated W surfaces”, Hironobu Umemoto, Kentaro Ohara, Daisuke Morita, Takashi Morimoto, Moroyuki Yamawaki, Atsushi Masuda, Hideki Matsumura, Japanese Journal of Applied Physics Part 1, vol. 42, no. 8, pp. 5315-5321, 2003.8.　DOI: 10.1143/JJAP.42.5315
  80. “Preferential In-N bond formation in InGaAsN layers”, Masayuki Uchida, Atsushi Masuda, Akio Yamamoto, Akihiro Hashimoto, Physica Status Solidi (c), vol. 0, no. 7, pp. 2745-2748, 2003.10.20.　DOI 10.1002/pssc.200303314
  81. “Catalytic decomposition of HCN on heated W surfaces to produce CN radicals”, Hironobu Umemoto, Takashi Morimoto, Moroyuki Yamawaki, Yoshie Masuda, Atsushi Masuda, Hideki Matsumura, Journal of Non-Crystalline Solids, vol. 338-340, pp. 65-69, 2004.6.15 (online 2004.3.24).　DOI: 10.1016/j.jnoncrysol.2004.02.023
  82. “Study on change in SIMS intensities near the interface between silicon-nitride film and silicon substrate”, Takahiro Hasegawa, Tomotsugu Date, Akiya Karen, Atsushi Masuda, Applied Surface Science, vols. 231–232, pp. 725-728, 2004.6.15 (on line 2004.5.24).　DOI: 10.1016/j.apsusc.2004.03.032
  83. “Highly moisture-resistive silicon nitride films prepared by catalytic chemical vapor deposition and application to gallium arsenide field-effect transistors”, Atsushi Masuda, Masahito Totsuka, Tomoki Oku, Ryo Hattori, Hideki Matsumura, Vacuum, vol. 74, nos. 3-4, pp. 525-529, 2004.6.7.　DOI: 10.1016/j.vacuum.2004.01.023
  84. “Cat-CVD (hot-wire CVD): How different from PECVD in preparing amorphous silicon”, Hideki Matsumura, Hironobu Umemoto, Atsushi Masuda, Journal of Non-Crystalline Solids, vol. 338-340, pp. 19-26, 2004.6.15.　 DOI: 10.1016/j.jnoncrysol.2004.02.014　（招待論文）
  85. “Correlation between O/Er content ratio and photoluminescence intensity of (Er,O)-doped hydrogenated amorphous Si thin films prepared by a catalytic chemical vapor deposition/laser ablation hybrid process”, Joe Sakai, Osamu Eryu, Haruo Akiyama, Kenshiro Nakashima, Atsushi Masuda, Hideki Matsumura, Japanese Journal of Applied Physics Part 1, vol. 43, no. 7A, pp. 4198-4201, 2004.7.　DOI: 10.1143/JJAP.43.4198
  86. “Nitridation of ultrathin SiO2 layers in metal-ferroelectric-insulator-semiconductor structures”, Masakazu Hirakawa, Gen Hirooka, Minoru Noda, Masanori Okuyama, Kazuhiro Honda, Atsushi Masuda, Hideki Matsumura, Integrated Ferroelectrics, vol. 68, no. 1, pp. 29-36, 2004.7.22.　DOI: 10.1080/10584580490895572
  87. “Highly moisture-resistive SiNx films prepared by catalytic chemical vapor deposition”, Akira Heya, Toshikazu Niki, Yasuto Yonezawa, Toshiharu Minamikawa, Susumu Muroi, Akira Izumi, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura, Japanese Journal of Applied Physics Part 2, vol. 43, no. 10B, pp. L1362-L1364, 2004.10.1.　DOI: 10.1143/JJAP.43.L1362
  88. “Effect of atomic hydrogen in the preparation of highly moisture-resistive SiNx films at low substrate temperatures”, Akira Heya, Toshikazu Niki, Masahiro Takano, Yasuto Yonezawa, Toshiharu Minamikawa, Susumu Muroi, Shigehira Minami, Akira Izumi, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura, Japanese Journal of Applied Physics Part 2, vol. 43, no. 12A, pp. L1546-L1548, 2004.11.12.　DOI: 10.1143/JJAP.43.L1546
  89. “Quantification of gas-phase H-atom number density by tungsten phosphate glass”, Takashi Morimoto, Hironobu Umemoto, Koji Yoneyama, Atsushi Masuda, Hideki Matsumura, Keiji Ishibashi, Hiromasa Tawarayama, Hiroshi Kawazoe, Japanese Journal of Applied Physics Part 1, vol. 44, no. 1B, pp. 732-735, 2005.1.24.　DOI: 10.1143/JJAP.44.732
  90. “Role of hydrogen in polycrystalline Si by excimer laser annealing”, Naoya Kawamoto, Naoto Matsuo, Atsushi Masuda, Yoshitaka Kitamon, Hideki Matsumura, Yasunori Harada, Tadaki Miyoshi, Hiroki Hamada, IEICE Transactions on Electronics, vol. E88-C, no. 2, pp. 241-246, 2005.2.1.　DOI: 10.1093/ietele/e88-c.2.241
  91. “Air-stable n-type carbon nanotube field-effect transistors with Si3N4 passivation films fabricated by catalytic chemical vapor deposition”, Daisuke Kaminishi, Hirokazu Ozaki, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto, Yasuhiro Seri, Atsushi Masuda, Hideki Matsumura, Applied Physics Letters, vol. 86, no. 11, pp. 113115-1-3, 2005.3.11.　DOI: 10.1063/1.1886898
  92. “Moisture-resistive properties of SiNx films prepared by catalytic chemical vapor deposition below 100 ℃ for flexible organic light-emitting diode displays”, Akira Heya, Toshikazu Niki, Masahiro Takano, Yasuto Yonezawa, Toshiharu Minamikawa, Susumu Muroi, Shigehira Minami, Tokuo Ikari, Akira Izumi, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura, Japanese Journal of Applied Physics Part 1, vol. 44, no. 4A, pp. 1923-1927, 2005.4.8.　DOI: 10.1143/JJAP.44.1923
  93. “Improvement of deposition rate by sandblasting of tungsten wire in catalytic chemical vapor deposition”, Akira Heya, Toshikazu Niki, Masahiro Takano, Yoshiteru Doguchi, Yasuto Yonezawa, Toshiharu Minamikawa, Susumu Muroi, Shigehira Minami, Akira Izumi, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura, Japanese Journal of Applied Physics Part 1, vol. 44, no. 4A, pp. 1943-1944, 2005.4.8　DOI: 10.1143/JJAP.44.1943
  94. “Preparation of low-stress SiNx films by catalytic chemical vapor deposition at low temperatures”, Masahiro Takano, Toshikazu Niki, Akira Heya, Tetsuo Osono, Yasuto Yonezawa, Toshiharu Minamikawa, Susumu Muroi, Shigehira Minami, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura, Japanese Journal of Applied Physics Part 1, vol. 44, no. 6A, pp. 4098-4102, 2005.6.10.　DOI: 10.1143/JJAP.44.4098
  95. “H2 dilution effect in the Cat-CVD processes of the SiH4/NH3 system”, S. G. Ansari, Hironobu Umemoto, Takashi Morimoto, Koji Yoneyama, Akira Izumi, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 501, Nos. 1-2, pp. 31-34, 2006.4.20. (on line 2005.8.19).　DOI: 10.1016/j.tsf.2005.07.098
  96. “Formation of highly moisture-resistive SiNx films on Si substrate by Cat-CVD at room temperature”, Toshiharu Minamikawa, Akira Heya, Toshikazu Niki, Masahiro Takano, Yasuto Yonezawa, Susumu Muroi, Shigehira Minami, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura, Thin Solid Films, vol. 501, nos. 1-2, pp. 154-156, 2006.4.20 (on line 2005.8.24)　DOI: 10.1016/j.tsf.2005.07.173
  97. “Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films”, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura, Thin Solid Films, vol. 501, nos. 1-2, pp. 149-153, 2006.4.20. (on line 2005.9.1).　DOI: 10.1016/j.tsf.2005.07.172　（招待論文）
  98. “Present status and future feasibility for industrial implementation of Cat-CVD (hot-wire CVD) technology”, Hideki Matsumura, Atsushi Masuda, Hironobu Umemoto, Thin Solid Films, vol. 501, nos. 1-2, pp. 58-60, 2006.4.20. (on line 2005.9.19).　DOI: 10.1016/j.tsf.2005.07.288
  99. “Technique for the production, preservation, and transportation of H atoms in metal chambers for processings”, S. G. Ansari, Hironobu Umemoto, Takashi Morimoto, Koji Yoneyama, Atsushi Masuda, Hideki Matsumura, Journal of Vacuum Science and Technology A, vol. 23, no. 6, pp. 1728-1731, 2005.10.25.　DOI: 10.1116/1.2101809
  100. “Preparation of SiNx gate-insulating films for bottom-gate type TFTs by Cat-CVD method”, Yasuhiro Seri, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, vol. 501, nos. 1-2, pp. 307-309, 2006.4.20. (on line 2005.11.29).　DOI: 10.1016/j.tsf.2005.07.302
  101. “Relation between pin a-Si:H solar-cell performances and intrinsic-layer properties prepared by Cat-CVD”, Takashi Kitamura, Kazuhiro Honda, Masaya Nishimura, Ken Sugita, Kazuya Takemoto, Yutaka Yamaguchi, Yuichi Toyama, Toshiharu Yamamoto, Sinichi Miyazaki, Mototaka Eguchi, Tomokazu Harano, Tsuyoshi Sugano, Norimitsu Yoshida, Atsushi Masuda, Takashi Itoh, Toshihiko Toyama, Shuichi Nonomura, Hiroaki Okamoto, Hideki Matsumura, Thin Solid Films, vol. 501, nos. 1-2, pp. 264-267, 2006.4.20. (on line 2005.12.1).　DOI: 10.1016/j.tsf.2005.07.251
  102. “Systematic study on photoresist removal using hydrogen atoms generated on heated catalyzer”, Kouhei Hashimoto, Atsushi Masuda, Hideki Matsumura, Tomoatsu Ishibashi, Kazuhisa Takao, Thin Solid Films, vol. 501, nos. 1-2, pp. 326-328, 2006.4.20. (on line 2005.12.2).　DOI: 10.1016/j.tsf.2005.07.287
  103. “High-rate deposition of SiNx films over 100 nm/min by Cat-CVD method at low temperatures below 80 ℃”, Tetsuo Osono, Akira Heya, Toshikazu Niki, Masahiro Takano, Toshiharu Minamikawa, Susumu Muroi, Atsushi Masuda, Hironobu Umemoto, Hideki Matsumura, Thin Solid Films, vol. 501, nos. 1-2, pp. 55-57, 2006.4.20. (online 2006.1.18).　DOI: 10.1016/j.tsf.2005.11.056
  104. “Mass-spectrometric studies of catalytic chemical vapor deposition processes of organic silicon compounds containing nitrogen”, Takashi Morimoto, S. G. Ansari, Koji Yoneyama, Teppei Nakajima, Atsushi Masuda, Hideki Matsumura, Megumi Nakamura, Hironobu Umemoto, Japanese Journal of Applied Physics Part 1, vol. 45, no. 2A, pp. 961-966, 2006.2.8.　DOI: 10.1143/JJAP.45.961
  105. “Grain enlargement of polycrystalline silicon by multipulse excimer laser annealing: Role of hydrogen”, Naoya Kawamoto, Atsushi Masuda, Naoto Matsuo, Yasuhiro Seri, Toshimasa Nishimori, Yoshitaka Kitamon, Hideki Matsumura, Hiroki Hamada, Tadaki Miyoshi, Japanese Journal of Applied Physics Part 1, vol. 45, no. 4A, pp. 2726-2730, 2006.4.7.　DOI: 10.1143/JJAP.45.2726
  106. “Defect reduction in polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor”, Toshiyuki Sameshima, Hiromi Hayasaka, Masato Maki, Atsushi Masuda, Takuya Matsui, Michio Kondo, Japanese Journal of Applied Physics Part 1, vol. 46, no. 3B, pp. 1286-1289, 2007.3.16.　DOI: 10.1143/JJAP.46.1286
  107. “Seeding method with silicon powder for the formation of silicon spheres in the drop method”, Zhengxin Liu, Takehiko Nagai, Atsushi Masuda, Michio Kondo, Kazutoshi Sakai, Koichi Asai, Journal of Applied Physics, vol. 101, no. 9, pp. 093505-1-5, 2007.5.3.　DOI: 10.1063/1.2736944
  108. “Characterization of spherical Si by photoluminescence measurement”, Takehiko Nagai, Zhengxin Liu, Atsushi Masuda, Michio Kondo, Journal of Applied Physics, vol. 101, no. 10, pp. 103530-1-5, 2007.5.29.　DOI: 10.1063/1.2718872
  109. “A concentrator module of spherical Si solar cell”, Zhengxin Liu, Atsushi Masuda, Takehiko Nagai, Takashi Miyazaki, Miwako Takano, Masahiro Takano, Haruyuki Yoshigahara, Kazutoshi Sakai, Koichi Asai, Michio Kondo, Solar Energy Materials and Solar Cells, vol. 91, no. 19, pp. 1805-1810, 2007.11.23 (on line 2007.7.23).　DOI: 10.1016/j.solmat.2007.06.008
  110. “Estimation of moisture barrier ability of thin SiNx single layer on polymer substrates prepared by Cat-CVD method”, Kimihiko Saitoh, R. S. Kumar, S. Chua, Atsushi Masuda, Hideki Matsumura, Thin Solid Films, Vol. 516, no. 5, pp. 607-610, 2008.1.15 (on line 2007.8.9).　DOI: 10.1016/j.tsf.2007.06.215
  111. “Cat-CVD SiN passivation films for OLEDs and packaging”, Akira Heya, Toshiharu Minamikawa, Toshikazu Niki, Shigehira Minami, Atsushi Masuda, Hironobu Umemoto, Naoto Matsuo, Hideki Matsumura, Thin Solid Films, vol. 516, no. 5, pp. 553-557, 2008.1.15 (on line 2007.8.15).　DOI: 10.1016/j.tsf.2007.06.220
  112. “Improvement of the production yield of spherical Si by optimization of the seeding technique in the dropping method”, Zhengxin Liu, Koichi Asai, Atsushi Masuda, Takehiko Nagai, Yoshihiko Akashi, Mikio Murozono, Michio Kondo, Japanese Journal of Applied Physics, vol. 46, no. 9A, pp. 5695-5700, 2007.9.7.　DOI: 10.1143/JJAP.46.5695
  113. “Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 ℃”, Akira Heya, Toshiharu Minamikawa, Toshikazu Niki, Shigehira Minami, Atsushi Masuda, Hironobu Umemoto, Naoto Matsuo, Hideki Matsumura, Thin Solid Films, vol. 516, no. 10, pp. 3000-3004, 2008.3.31 (on line 2007.11.12).　DOI: 10.1016/j.tsf2007.11.001
  114. “Epitaxial growth of SiC on silicon on insulator substrates with ultrathin top Si layer by hot-mesh chemical vapor deposition”, Hitoshi Miura, Kanji Yasui, Kazuki Abe, Atsushi Masuda, Yuichiro Kuroki, Hiroshi Nishiyama, Masasuke Takata, Yasunobu Inoue, Tadashi Akahane, Japanese Journal of Applied Physics, vol. 47, no. 1, pp. 569-572, 2008.1.22.　DOI: 10.1143/JJAP.47.569
  115. “Improvement of the uniformity in electronic properties of AZO films using an rf magnetron sputtering with a mesh grid electrode”, Kanji Yasui, Akira Asano, Miku Otsuji, Hironori Katagiri, Atsushi Masuda, Hiroshi Nishiyama, Yasunobu Inoue, Masasuke Takata, Tadashi Akahane, Materials Science and Engineering B, vol. 148, nos. 1-3, pp. 26-29, 2008.2.25.　DOI: 10.1016/j.mseb.2007.09.016
  116. “Investigating minority-carrier lifetime in small spherical Si using microwave photoconductance decay”, Zhengxin Liu, Atsushi Masuda, Michio Kondo, Journal of Applied Physics, vol. 103, no. 10, pp. 104909-1-6, 2008.5.29.　DOI: 10.1063/1.2936979
  117. “Formation of low-defect-concentration polycrystalline Si films by thermal plasma jet crystallization technique”, Takuya Yorimoto, Seiichiro Higashi, Hirotaka Kaku, Tatsuya Okada, Hideki Murakami, Seiichi Miyazaki, Takuya Matsui, Atsushi Masuda, Michio Kondo, Japanese Journal of Applied Physics, vol. 47, no. 8, pp. 6949-6952, 2008.8.22.　DOI: 10.1143/JJAP.47.6949
  118. “Study on silicon-slicing technique using plasma-etching processing”, Mitsutaka Yamaguchi, Yoshinori Abe, Atsushi Masuda, Michio Kondo, Solar Energy Materials and Solar Cells, vol. 93, nos. 6-7, pp. 789-791, 2008.12.2.　DOI: 10.1016/j.solmat.2008.09.052
  119. “Investigation on the crystal growth process of spherical Si single crystals by melting”, Zhengxin Liu, Atsushi Masuda, Michio Kondo, Journal of Crystal Growth, vol. 311, no. 16, pp. 4116-4122, 2009.6.27.　DOI: 10.1016/j.jcrysgro.2009.06.042
  120. “Failure assessments for outside-exposed photovoltaic modules”, Shigenori Shimizu, Takashi Arai, Tomohiko Sagawa, Yuichi Aoki, Takumi Hirakawa, Hiroshi Hiraike, Shiro Hamamoto, Sadao Sakamoto, Takuya Doi, Atsushi Masuda, Masaaki Yamamichi, Japanese Journal of Applied Physics, vol. 51, no. 10S, pp. 10NF04-1-4, 2012.10.22.　DOI: 10.1143/JJAP.51.10NF04
  121. “Microscopic degradation mechanisms in silicon photovoltaic module under long-term environmental exposure”, Keiko Matsuda, Takeshi Watanabe, Koichi Sakaguchi, Masanobu Yoshikawa, Takuya Doi, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 51, no. 10S, pp. 10NF07-1-5, 2012.10.22.　DOI: 10.1143/JJAP.51.10NF07
  122. “Measuring method of moisture ingress into photovoltaic modules”, Masaharu Miyashita, Shinji Kawai, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 51, no. 10S, pp. 10NF12-1-4, 2012.10.22.　DOI: 10.1143/JJAP.51.10NF12
  123. “Early failure detection of interconnection with rapid thermal cycling in photovoltaic modules”, Yuichi Aoki, Manabu Okamoto, Atsushi Masuda, Takuya Doi, Tadanori Tanahashi, Japanese Journal of Applied Physics, vol. 51, no. 10S, pp. 10NF13-1-4, 2012.10.22.　DOI: 10.1143/JJAP.51.10NF13
  124. “Investigation on anti-reflection coating for high resistance to potential induced degradation”, Ken Mishina, Atsufumi Ogishi, Kiyoshi Ueno, Takuya Doi, Kohjiro Hara, Norihiro Ikeno, Daisuke Imai, Tetsuya Saruwatari, Makoto Shinohara, Toshiharu Yamazaki, Atsushi Ogura, Yoshio Ohshita, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 53, no. 3S1, pp. 03CE01-1-4, 2014.2.4.　DOI: 10.7567/JJAP.53.03CE01
  125. “Detection of acid moisture in photovoltaic modules using a dual wavelength pH-sensitive fluorescent dye”, Takashi Asaka, Kentaro Iwami, Atsushi Taguchi, Norihiro Umeda, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 53, no. 4S, pp. 04ER18-1-4, 2014.3.19.　DOI: 10.7567/JJAP.53.14ER18
  126. “Novel lighter weight crystalline silicon photovoltaic module using acrylic-film as a cover sheet”, Taira Kajisa, Haruko Miyauchi, Kazumi Mizuhara, Kentaro Hayashi, Tooru Tokimitsu, Masanao Inoue, Kohjiro Hara, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 53, no. 9, pp. 092302-1-7, 2014.8.20.　DOI: 10.7567/JJAP.53.092302
  127. “Crystalline Si photovoltaic modules based on TiO2-coated cover glass against potential-induced degradation”, Kohjiro Hara, Hiromichi Ichinose, Takurou N. Murakami, Atsushi Masuda, RSC Advances, vol. 4, issue 83, pp. 44291-44295, 2014.8.29.　DOI: 10.1039/c4ra06791f
  128. “Crystalline Si photovoltaic modules functionalized by a thin polyethylene film against potential and damp-heat-induced degradation”, Kohjiro Hara, Sachiko Jonai, Atsushi Masuda, RSC Advances, vol. 5, issue 20, pp. 15017-15023, 2015.1.14.　DOI: 10.1039/c4ra13360a
  129. “Degradation by acetic acid for crystalline Si photovoltaic modules”, Atsushi Masuda, Naomi Uchiyama, Yukiko Hara, Japanese Journal of Applied Physics, vol. 54, no. 4S, pp. 04DR04-1-5, 2015.3.12.　DOI: 10.7567/JJAP.54.04DR04
  130. “Potential-induced degradation in photovoltaic modules based on n-type single crystalline Si solar cells”, Kohjiro Hara, Sachiko Jonai, Atsushi Masuda, Solar Energy Materials and Solar Cells, vol. 140, pp. 361-365, 2015.5.14.　DOI: 10.1016/j.solmat.2015.04.037
  131. “Relationship between cross-linking conditions of ethylene vinyl acetate and potential induced degradation for crystalline silicon photovoltaic modules”, Sachiko Jonai, Kohjiro Hara, Yuji Tsutsui, Hidenari Nakahama, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 54, no. 8S1, pp. 08KG01-1-5, 2015.7.1.　DOI: 10.7567/JJAP.54.08KG01
  132. “Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation”, Ken Mishina, Atsufumi Ogishi, Kiyoshi Ueno, Sachiko Jonai, Norihiro Ikeno, Tetsuya Saruwatari, Kohjiro Hara, Atsushi Ogura, Toshiharu Yamazaki, Takuya Doi, Makoto Shinohara, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 54, no. 8S1, pp. 08KD12-1-6, 2015.7.10.　DOI: 10.7567/JJAP.54.08KD12
  133. “Potential-induced degradation of Cu(In,Ga)Se2 photovoltaic modules”, Seira Yamaguchi, Sachiko Jonai, Kohjiro Hara, Hironori Komaki, Yukiko Shimizu-Kamikawa, Hajime Shibata, Shigeru Niki, Yuji Kawakami, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 54, no. 8S1, pp. 08KC13-1-7, 2015.7.17.　DOI: 10.7567/JJAP.54.08KC13
  134. “Development of a pH sensor based on a nanostructured filter adding pH-sensitive fluorescent dye for detecting acetic acid in photovoltaic modules”, Takashi Asaka, Tomohiro Itayama, Hideaki Nagasaki, Kentaro Iwami, Chizuko Yamamoto, Yukiko Hara, Atsushi Masuda, Norihiro Umeda, Japanese Journal of Applied Physics, vol. 54, no. 8S1, pp. 08KG07-1-6, 2015.7.23.　DOI: 10.7567/JJAP.54.08KG07
  135. “Acceleration of potential-induced degradation by salt-mist preconditioning in crystalline silicon photovoltaic modules”, Soh Suzuki, Naoki Nishiyama, Seiji Yoshino, Takumi Ujiro, Shin Watanabe, Takuya Doi, Atsushi Masuda, Tadanori Tanahashi, Japanese Journal of Applied Physics, vol. 54, no. 8S1, pp. 08KG08-1-12, 2015.7.24.　DOI: 10.7567/JJAP.54.08KG08
  136. “Module composition for reliability test of organic photovoltaics”, Hideyuki Morita, Masanori Miyashita, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 54, no. 8S1, pp. 08KF07-1-5, 2015.7.28.　DOI 10.7567/JJAP.54.08KF07
  137. “Field testing of thermoplastic encapsulants in high-temperature installations”, Michael D. Kempe, David C. Miller, John H. Wohlgemuth, Sarah R. Kurtz, John M. Moseley, Qurat A. Shah, Govindasamy Tamizhmani, Keiichiro Sakurai, Masanao Inoue, Takuya Doi, Atsushi Masuda, Sam L. Samuels, Crystal E. Vanderpan, Energy Science & Engineering, vol. 3, no. 6, pp. 565-580, 2015.11.25.　DOI: 10.1002/ese3.104
  138. “Multi angle laser light scattering evaluation of field exposed thermoplastic photovoltaic encapsulant materials”, Michael D. Kempe, David C. Miller, John H. Wohlgemuth, Sarah R. Kurtz, John M. Moseley, Dylan L. Nobles, Katherine M. Stika, Yefim Brun, Sam L. Samuels, Qurat (Annie) Shah, Govindasamy Tamizhmani, Keiichiro Sakurai, Masanao Inoue, Takuya Doi, Atsushi Masuda, Crystal E. Vanderpan, Energy Science & Engineering, vol. 4, no. 1, pp. 40-51, 2016.1.8.　DOI: 10.1002/ese3.106
  139. “Acceleration of degradation by highly accelerated stress test and air-included highly accelerated stress test in crystalline silicon photovoltaic modules”, Soh Suzuki, Tadanori Tanahashi, Takuya Doi, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 55, no. 2, pp. 022302-1-9, 2016.1.14.　DOI: 10.7567/JJAP.55.022302
  140. “Consideration on Na diffusion and recovery phenomena in potential-induced degradation for crystalline Si photovoltaic modules”, Atsushi Masuda, Yukiko Hara, Sachiko Jonai, Japanese Journal of Applied Physics, vol. 55, no. 2S, pp. 02BF10-1-5, 2016.1.25.　DOI: 10.7567/JJAP.55.02BF10
  141. “Sequential and combined acceleration tests for crystalline Si photovoltaic modules”, Atsushi Masuda, Chizuko Yamamoto, Naomi Uchiyama, Kiyoshi Ueno, Toshiharu Yamazaki, Kazunari Mitsuhashi, Akihiro Tsutsumida, Jyunichi Watanabe, Jyunko Shirataki, Keiko Matsuda, Japanese Journal of Applied Physics, vol. 55, no. 4S, pp. 04ES10-1-7, 2016.3.16.　DOI: 10.7567/JJAP.55.04ES10
  142. “Behavior of the potential-induced degradation of photovoltaic modules fabricated using flat mono-crystalline silicon cells with different surface orientations”, Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira, Japanese Journal of Applied Physics, vol. 55, no. 4S, pp. 04ES14-1-5, 2016.3.24.　DOI: 10.7567/JJAP.55.04ES14
  143. “Changes in the current density-voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation”, Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira, Solar Energy Materials and Solar Cells, vol. 151, pp. 113-119, 2016.3.24.　DOI: 10.1016/j.solmat.2016.03.003
  144. “Effects of UV on power degradation of photovoltaic modules in combined acceleration tests”, Trang Ngo, Yushi Heta, Takuya Doi, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 55, no. 5, 052301-1-8, 2016.4.4.　DOI: 10.7567/JJAP.55.052301
  145. “Degradation of encapsulants for photovoltaic modules made of ethylene vinyl acetate studied by positron annihilation lifetime spectroscopy”, Hideaki Hagihara, Masao Kunioka, Hiroyuki Suda, Yukiko Hara, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 55, no. 10, pp. 102302-1-5, 2016.9.14.　DOI: 10.7567/JJAP.55.102302
  146. “Microscopic aspects of potential-induced degradation phenomena and their recovery processes for p-type crystalline Si photovoltaic modules”, Atsushi Masuda, Minoru Akitomi, Masanao Inoue, Keizo Okuwaki, Atsuo Okugawa, Kiyoshi Ueno, Toshiharu Yamazaki, Kohjiro Hara, Current Applied Physics, vol. 16, no. 12, pp. 1659-1665, 2016.10.6.　DOI: 10.1016/j.cap.2016.10.001
  147. “Progression of rapid potential-induced degradation of n-type single-crystalline silicon photovoltaic modules”, Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira, Applied Physics Express, vol. 9, no. 11, pp. 112301-1-4, 2016.10.21.　DOI: 10.7567/APEX.9.112301
  148. “Reduction in the short-circuit current density of silicon heterojunction photovoltaic modules subjected to potential-induced degradation tests”, Seira Yamaguchi, Chizuko Yamamoto, Keisuke Ohdaira, Atsushi Masuda, Solar Energy Materials and Solar Cells, vol. 161, pp. 439-443, 2016.12.27.　DOI: 10.1016/j-solmat.2016.12.027
  149. “Potential-induced degradation of thin-film Si photovoltaic modules”, Atsushi Masuda, Yukiko Hara, Japanese Journal of Applied Physics, vol. 56, no. 4S, pp. 04CS04-1-5, 2017.2.15.　DOI: 10.7567/JJAP.56.04CS04
  150. “Influence of surface structure of n-type single-crystalline Si solar cells on potential-induced degradation”, Kohjiro Hara, Kinichi Ogawa, Yusuke Okabayashi, Hiroyuki Matsuzaki, Atsushi Masuda, Solar Energy Materials and Solar Cells, vol. 166, pp. 132-139, 2017.3.23.　DOI: 10.1016/j.solmat.2017.03.018
  151. “Annual degradation rates of recent crystalline silicon photovoltaic modules”, Tetsuyuki Ishii, Atsushi Masuda, Progress in Photovoltaics: Research and Applications, vol. 25, no. 12, pp. 953-967, 2017.7.10.　DOI: 10.1002/pip.2903
  152. “Development of a practical method of estimating electric power from various photovoltaic technologies with high precision”, Tetsuyuki Ishii, Ritsuko Sato, Sungwoo Choi, Yasuo Chiba, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 56, pp. no. 8S2, 08MD05-1-5, 2017.7.19.　DOI: 10.7567/JJAP.56.08MD05
  153. “Time-dependent changes in copper indium gallium (di)selenide and cadmium telluride photovoltaic modules due to outdoor exposure”, Sungwoo Choi, Ritsuko Sato, Tetsuyuki Ishii, Yasuo Chiba, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 56, no. 8S2, pp. 08MD06-1-5, 2017.7.25.　DOI: 10.7567/JJAP.56.08MD06
  154. “Causes of degradation identified by the extended thermal cycling test on commercially available crystalline silicon photovoltaic modules”, Shinji Kawai, Tadanori Tanahashi, Yutaka Fukumoto, Fujio Tamai, Atsushi Masuda, Michio Kondo, IEEE Journal of Photovoltaics, vol. 7, no. 6, pp. 1511-1518, 2017.8.24.　DOI: 10.1109/JPHOTOV.2017.2741102
  155. “Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants”, Kohjiro Hara, Hiroto Ohwada, Tomoyoshi Furihata, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 57, no. 2, pp. 027101-1-9, 2018.1.5.　DOI: 10.7567/JJAP.57.027101
  156. “Bending cyclic load test for crystalline silicon photovoltaic modules”, Soh Suzuki, Takuya Doi, Atsushi Masuda, Tadanori Tanahashi, Japanese Journal of Applied Physics, vol. 57, no. 2S2, pp. 02CE05-1-5, 2018.1.9.　DOI: 10.7567/JJAP.57.02CE05
  157. “Guiding principle for crystalline Si photovoltaic modules with high tolerance to acetic acid”, Atsushi Masuda, Yukiko Hara, Japanese Journal of Applied Physics, vol. 57, no. 4S, pp. 04FS06-1-5, 2018.3.12.　DOI: 10.7567/JJAP.57.04FS06
  158. “Multistage performance deterioration in n-type crystalline silicon photovoltaic modules undergoing potential-induced degradation”, Yutaka Komatsu, Seira Yamaguchi, Atsushi Masuda, Keisuke Ohdaira, Microelectronics Reliability vol. 84, pp. 127-133, 2018.3.26.　DOI: 10.1016/j.microrel.2018.03.018
  159. “Comprehensive study of potential-induced degradation in silicon heterojunction photovoltaic cell modules”, Seira Yamaguchi, Chizuko Yamamoto, Keisuke Ohdaira, Atsushi Masuda, Progress in Photovoltaics: Research and Applications, vol. 26, no. 9, pp. 697-708, 2018.4.16.　DOI: 10.1002/pip.3006
  160. “Localization and characterization of a degraded site in crystalline silicon photovoltaic cells exposed to acetic acid vapor”, Tadanori Tanahashi, Norihiko Sakamoto, Hajime Shibata, Atsushi Masuda, IEEE Journal of Photovoltaics, vol. 8, no. 4, pp. 997-1004, 2018.6.13.　DOI: 10.1109/JPHOTOV.2018.2839259
  161. “Effect of bias voltage application on potential-induced degradation for crystalline silicon photovoltaic modules”, Sachiko Jonai, Tadanori Tanahashi, Hajime Shibata, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 57, no. 8S3, pp. 08RG01-1-5, 2018.6.27.　DOI: 10.7567/JJAP.57.08RG01
  162. “Exploring suitable damp heat and potential induced degradation test procedures for Cu(In,Ga)(S,Se) photovoltaic modules”, Keiichiro Sakurai, Hiroshi Tomita, Darshan Schmitz, Shuuji Tokuda, Kinichi Ogawa, Hajime Shibata, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 57, no. 8S3, pp. 08RG02-1-5, 2018.6.28.　DOI: 10.7567/JJAP.57.08RG02
  163. “Overall analysis of change in power generation by outdoor exposure of photovoltaic modules installed at AIST Kyushu Center”, Yasuo Chiba, Tetsuyuki Ishii, Ritsuko Sato, Sungwoo Choi, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 57, no. 8S3, pp. 08RG04-1-5, 2018.7.6.　DOI: 10.7567/JJAP.57.08RG04
  164. “Sodium distribution at the surface of silicon nitride film after potential-induced degradation test and recovery test of photovoltaic modules”, Fumitaka Ohashi, Yoshiki Mizuno, Hiroki Yoshida, Hiroya Kosuga, Taishi Furuya, Ryo Fuseya, Ruben Jerónimo Freitas, Yukiko Hara, Atsushi Masuda, Shuichi Nonomura, Japanese Journal of Applied Physics, vol. 57, no. 8S3, pp. 08RG05-1-6, 2018.7.9.　DOI: 10.7567/JJAP.57.08RG05
  165. “Soiling by volcanic ash fall on photovoltaic modules and effects of hydrophilic coating on module cover glass”, Tadashi Hirayama, Shota Saiki, Shuma Kawabata, Akihito Hirai, Yukio Yoshimura, Chizuko Yamamoto, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 57, no. 8S3, pp. 08RG06-1-5, 2018.7.11.　DOI: 10.7567/JJAP.57.08RG06
  166. “Lamination-interface-dependent deacetylation of ethylene vinyl acetate encapsulant in crystalline Si photovoltaic modules evaluated by positron annihilation lifetime spectroscopy”, Hideaki Hagihara, Hiroaki Sato, Yukiko Hara, Sachiko Jonai, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 57, no. 8, pp. 082301-1-6, 2018.7.12.　DOI: 10.7567/JJAP.57.082301
  167. “Accurate measurement and estimation of solar cell temperature in photovoltaic module operating in real environmental conditions”, Kensuke Nishioka, Kazuyuki Miyamura, Yasuyuki Ota, Minoru Akitomi, Yasuo Chiba, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 57, no. 8S3, pp. 08RG08-1-5, 2018.7.13.　DOI: 10.7567/JJAP.57.08RG08
  168. “Effect of light irradiation during potential-induced degradation tests for p-type crystalline Si photovoltaic modules”, Atsushi Masuda, Yukiko Hara, Japanese Journal of Applied Physics, vol. 57, no. 8S3, 08RG13-1-4, 2018.7.19.　DOI: 10.7567/JJAP.57.08RG13
  169. “Reliability and long term durability of bifacial photovoltaic modules using transparent backsheet”, Keita Arihara, Ryosuke Koyoshi, Yasuhiro Ishii, Masaru Kadowaki, Atsushi Nakahara, Hitoshi Nishikawa, Taiki Takayama, Hiroyuki Nishimura, Kinichi Ogawa, Yasuo Chiba, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 57, no. 8S3, pp. 08RG15-1-9, 2018.7.20.　DOI: 10.7567/JJAP.57.08RG15
  170. “Detection of acetic acid produced in photovoltaic modules based on tin film corrosion during damp heat test”, Ryo Hamaoka, Kentaro Iwami, Tomohiro Itayama, Hideaki Nagasaki, Satoru Takemoto, Chizuko Yamamoto, Yukiko Hara, Atsushi Masuda, Norihiro Umeda, Japanese Journal of Applied Physics, vol. 57, no. 8S3, pp. 08RG16-1-5, 2018.7.20.　DOI: 10.7567/JJAP.57.08RG16
  171. “Temperature dependence measurements and performance analyses of high-efficiency interdigitated back-contact, passivated emitter and rear cell, and silicon heterojunction photovoltaic modules”, Makoto Kasu, Jaffar Abdu, Shigeomi Hara, Sungwoo Choi, Yasuo Chiba, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 57, no. 8S3, pp. 08RG18-1-7, 2018.7.24.　DOI: 10.7567/JJAP.57.08RG18
  172. “Performance degradation due to outdoor exposure and seasonal variation in amorphous silicon photovoltaic modules”, Sungwoo Choi, Tetsuyuki Ishii, Ritsuko Sato, Yasuo Chiba, Atsushi Masuda, Thin Solid Films, vol. 661, pp. 116-121, 2018.9.1.　DOI: 10.1016/j.tsf.2018.07.017
  173. “Potential-induced degradation of n-type crystalline Si photovoltaic modules in practical outdoor systems”, Kohjiro Hara, Minoru Akitomi, Atsushi Masuda, Yasuo Chiba, Japanese Journal of Applied Physics, vol. 57, no. 11, pp. 117102-1-8, 2018.9.27.　DOI: 10.7567/JJAP.57.117102
  174. “Effect of barrier property of backsheet on degradation of crystalline silicon photovoltaic modules under combined acceleration test composed of UV irradiation and subsequent damp-heat stress”, Yoshiyuki Kobayashi, Hideyuki Morita, Kentaro Mori, Atsushi Masuda, Japanese Journal of Applied Physics., vol. 57, no. 12, pp. 127101-1-7, 2018.11.8.　DOI: 10.7567/JJAP.57.127101
  175. “Rapid progression and subsequent saturation of polarization-type potential-induced degradation of n-type front-emitter crystalline-silicon photovoltaic modules”, Seira Yamaguchi, Kyotaro Nakamura, Atsushi Masuda, Keisuke Ohdaira, Japanese Journal of Applied Physics, vol. 57, no. 12, pp. 122301-1-6, 2018.11.12.　DOI: 10.7567/JJAP.57.122301
  176. “Origin of Na causing potential-induced degradation for p-type crystalline Si photovoltaic modules”, Sachiko Jonai, Atsushi Masuda, AIP Advances, vol. 8, no. 11, pp. 115311-1-8, 2018.11.13.　DOI: 10.1063/1.5040516
  177. “Corrosion-induced AC impedance elevation in front electrodes of crystalline silicon photovoltaic cells within field-aged photovoltaic modules”, Tadanori Tanahashi, Norihiko Sakamoto, Hajime Shibata, Atsushi Masuda, IEEE Journal of Photovoltaics, vol. 9, no. 3, pp. 741-751, 2019.2.8.　DOI: 10.1109/JPHOTOV.2019.2893442　Erratum: vol. 9, no. 4, p. 1154.　DOI: 10.1109/JPHOTOV.2019.2914944
  178. “Similarity of potential-induced degradation in superstrate-type thin-film CdTe and Si photovoltaic modules”, Atsushi Masuda, Yukiko Hara, Yasuyoshi Shiina, Shota Okamoto, Tamotsu Okamoto, Japanese Journal of Applied Physics, vol. 58, no. SB, pp. SBBF07-1-6, 2019.2.25.　DOI: 10.7567/1347-4065/aafe67
  179. “Investigation of the power generation of organic photovoltaic modules connected to the power grid for more than three years”, Ritsuko Sato, Yasuo Chiba, Masayuki Chikamatsu, Yuji Yoshida, Tetsuya Taima, Makoto Kasu, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 58, no. 5, pp. 052001-1-9, 2019.4.10.　DOI: 10.7567/1347-4065/ab0742
  180. “Investigation of UV and hygrothermal stresses to back side of rack mounted photovoltaic modules”, Yoshiyuki Kobayashi, Hideyuki Morita, Kentaro Mori, Atsushi Masuda, Renewable Energy Focus, vol. 29, pp. 107-113, 2019.4.29.　DOI: 10.1016/j.ref.2019.03.008
  181. “Influence of sodium on the potential-induced degradation for n-type crystalline silicon photovoltaic modules”, Keisuke Ohdaira, Yutaka Komatsu, Tomoyasu Suzuki, Seira Yamaguchi, Atsushi Masuda, Applied Physics Express, vol. 12, no. 6, pp. 064004-1-4, 2019.5.14.　DOI: 10.7567/1882-0786/ab1b1a
  182. “Effect of additives in electrode paste of p-type crystalline Si solar cells on potential-induced degradation”, Sachiko Jonai, Aki Tanaka, Kazuo Muramatsu, Genki Saito, Kyotaro Nakamura, Atsushi Ogura, Yoshio Ohshita, Atsushi Masuda, Solar Energy, vol. 188, pp. 1292-1297, 2019.8.　DOI: 10.1016/j.solener.2019.07.012
  183. “Temperature dependence of potential-induced degraded p-type mono-crystalline silicon photovoltaic cell characteristics”, Makoto Kasu, Jaffar Abdu, Shigeomi Hara, Sungwoo Choi, Kinichi Ogawa, Yasuo Chiba, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 58, no. 10, pp. 101005-1-6, 2019.9.19.　DOI: 10.7567/1347-4065/ab3f54
  184. “Universal explanation for degradation by charge accumulation in crystalline Si photovoltaic modules with application of high voltage”, Sachiko Jonai, Kyotaro Nakamura, Atsushi Masuda, Applied Physics Express, vol. 12, no. 10, pp. 101003-1-4, 2019.9.20.　DOI: 10.7567/1882-0786/ab3cf7
  185. “Output power behavior of passivated emitter and rear cell photovoltaic modules during early installation stage: Influence of light-induced degradation”, Ritsuko Sato, Tetsuyuki Ishii, Sungwoo Choi, Yasuo Chiba, Makoto Kasu, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 58, no. 10, pp. 106510-1-7, 2019.10.4.　DOI: 10.7567/1347-4065/ab42ba
  186. “Influence of backsheet materials on potential-induced degradation in n-type crystalline-silicon photovoltaic cell modules”, Seira Yamaguchi, Chizuko Yamamoto, Atsushi Masuda, Keisuke Ohdaira, Japanese Journal of Applied Physics, vol. 58, no. 12, pp. 120901-1-3, 2019.11.6.　DOI: 10.7567/1347-4065/ab4fd2
  187. “Effect of a SiO2 film on the potential-induced degradation of n-type front-emitter crystalline Si photovoltaic modules”, Tomoyasu Suzuki, Seira Yamaguchi, Kyotaro Nakamura, Atsushi Masuda, Keisuke Ohdaira, Japanese Journal of Applied Physics, vol. 58, no. SC, pp. SCCD02-1-5, 2019.11.29.　DOI: 10.7567/1347-4065/ab4cf9
  188. “Characteristics change in organic photovoltaics by thermal recovery and photodegradation”, Ritsuko Sato, Yasuo Chiba, Masayuki Chikamatsu, Yuji Yoshida, Tetsuya Taima, Makoto Kasu, Atsushi Masuda, Japanese Journal of Applied Physics, vol. 58, no. SC, pp. SCCD04-1-7, 2019.11.29.　DOI: 10.7567/1347-4065/ab489b

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